Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non–Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS–1D Software

Cadmium telluride (CdTe), a metallic dichalcogenide material, was utilized as an absorber layer for thin film–based solar cells with appropriate configurations and the SCAPS–1D structures program used to evaluate results. In both known developing film photovoltaic systems, CdS thin–film buffer is frequently employed traditional n–type heterojunction partner. this study, numerical simulation determine suitable non–toxic material that can be instead of CdS, among various types layers (ZnSe, ZnO, ZnS In2S3) carrier concentrations (NA) (ND) were varied optimal parameters. Carrier (NA from 2 × 1012 cm−3 1017 ND 1 1016 1022 cm−3) differed. The results showed use buffer–layer–based CdTe cell had highest efficiency (%) 17.43%. Furthermore, high conversion efficiencies 17.42% 16.27% ZnSe ZnO-based layers, respectively. As result, ZnO are potential candidates replacing in cells. Here, (CdTe) (ZnSe) chosen improve by finding density concentration (acceptor donor). findings above provide helpful recommendations fabricating high–efficiency metal oxide–based lab.